Unidirectional lasing from InGaN multiple-quantum-well spiral-shaped micropillars
Identifieur interne : 00C000 ( Main/Repository ); précédent : 00BF99; suivant : 00C001Unidirectional lasing from InGaN multiple-quantum-well spiral-shaped micropillars
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Abstract
We report unidirectional emission from lasing in In0.09Ga0.91N/In0.01Ga0.99N multiple-quantum-well spiral micropillars. Our imaging technique shows that the maximum emission comes from the notch of the spiral microcavities at an angle about 40° from the normal of the notch. At room temperature, the spiral microcavity lases near 400 nm when optically pumped with 266 or 355 nm light. A reduction in the lasing threshold and an improvement in unidirectionality occurs when the microcavity is selectively pumped near its boundary. © 2003 American Institute of Physics.
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<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en" level="a">Unidirectional lasing from InGaN multiple-quantum-well spiral-shaped micropillars</title><author><name sortKey="Chern, G D" uniqKey="Chern G">G. D. Chern</name><affiliation wicri:level="2"><inist:fA14 i1="01"><s1>Department of Applied Physics, Yale University, New Haven, Connecticut 06520</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Connecticut</region></placeName><wicri:cityArea>Department of Applied Physics, Yale University, New Haven</wicri:cityArea></affiliation></author><author><name sortKey="Tureci, H E" uniqKey="Tureci H">H. E. Tureci</name><affiliation wicri:level="2"><inist:fA14 i1="01"><s1>Department of Applied Physics, Yale University, New Haven, Connecticut 06520</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Connecticut</region></placeName><wicri:cityArea>Department of Applied Physics, Yale University, New Haven</wicri:cityArea></affiliation></author><author><name sortKey="Stone, A Douglas" uniqKey="Stone A">A. Douglas Stone</name><affiliation wicri:level="2"><inist:fA14 i1="01"><s1>Department of Applied Physics, Yale University, New Haven, Connecticut 06520</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Connecticut</region></placeName><wicri:cityArea>Department of Applied Physics, Yale University, New Haven</wicri:cityArea></affiliation></author><author><name sortKey="Chang, R K" uniqKey="Chang R">R. K. Chang</name><affiliation wicri:level="2"><inist:fA14 i1="01"><s1>Department of Applied Physics, Yale University, New Haven, Connecticut 06520</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Connecticut</region></placeName><wicri:cityArea>Department of Applied Physics, Yale University, New Haven</wicri:cityArea></affiliation></author><author><name sortKey="Kneissl, M" uniqKey="Kneissl M">M. Kneissl</name><affiliation wicri:level="2"><inist:fA14 i1="02"><s1>Palo Alto Research Center (PARC), Palo Alto, California 94304</s1><sZ>5 aut.</sZ><sZ>6 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Californie</region></placeName><wicri:cityArea>Palo Alto Research Center (PARC), Palo Alto</wicri:cityArea></affiliation></author><author><name sortKey="Johnson, N M" uniqKey="Johnson N">N. M. Johnson</name><affiliation wicri:level="2"><inist:fA14 i1="02"><s1>Palo Alto Research Center (PARC), Palo Alto, California 94304</s1><sZ>5 aut.</sZ><sZ>6 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Californie</region></placeName><wicri:cityArea>Palo Alto Research Center (PARC), Palo Alto</wicri:cityArea></affiliation></author></titleStmt><publicationStmt><idno type="inist">03-0352830</idno><date when="2003-09-01">2003-09-01</date><idno type="stanalyst">PASCAL 03-0352830 AIP</idno><idno type="RBID">Pascal:03-0352830</idno><idno type="wicri:Area/Main/Corpus">00CC60</idno><idno type="wicri:Area/Main/Repository">00C000</idno></publicationStmt><seriesStmt><idno type="ISSN">0003-6951</idno><title level="j" type="abbreviated">Appl. phys. lett.</title><title level="j" type="main">Applied physics letters</title></seriesStmt></fileDesc><profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Experimental study</term><term>Gallium compounds</term><term>III-V semiconductors</term><term>Indium compounds</term><term>Microcavity lasers</term><term>Optical pumping</term><term>Quantum well lasers</term></keywords><keywords scheme="Pascal" xml:lang="fr"><term>4255P</term><term>8535B</term><term>4255S</term><term>Etude expérimentale</term><term>Indium composé</term><term>Gallium composé</term><term>Semiconducteur III-V</term><term>Laser puits quantique</term><term>Laser microcavité</term><term>Pompage optique</term></keywords></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">We report unidirectional emission from lasing in In<sub>0.09</sub>Ga<sub>0.91</sub>N/In<sub>0.01</sub>Ga<sub>0.99</sub>N multiple-quantum-well spiral micropillars. Our imaging technique shows that the maximum emission comes from the notch of the spiral microcavities at an angle about 40° from the normal of the notch. At room temperature, the spiral microcavity lases near 400 nm when optically pumped with 266 or 355 nm light. A reduction in the lasing threshold and an improvement in unidirectionality occurs when the microcavity is selectively pumped near its boundary. © 2003 American Institute of Physics.</div></front></TEI><inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>0003-6951</s0></fA01><fA02 i1="01"><s0>APPLAB</s0></fA02><fA03 i2="1"><s0>Appl. phys. lett.</s0></fA03><fA05><s2>83</s2></fA05><fA06><s2>9</s2></fA06><fA08 i1="01" i2="1" l="ENG"><s1>Unidirectional lasing from InGaN multiple-quantum-well spiral-shaped micropillars</s1></fA08><fA11 i1="01" i2="1"><s1>CHERN (G. D.)</s1></fA11><fA11 i1="02" i2="1"><s1>TURECI (H. E.)</s1></fA11><fA11 i1="03" i2="1"><s1>STONE (A. Douglas)</s1></fA11><fA11 i1="04" i2="1"><s1>CHANG (R. K.)</s1></fA11><fA11 i1="05" i2="1"><s1>KNEISSL (M.)</s1></fA11><fA11 i1="06" i2="1"><s1>JOHNSON (N. M.)</s1></fA11><fA14 i1="01"><s1>Department of Applied Physics, Yale University, New Haven, Connecticut 06520</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ></fA14><fA14 i1="02"><s1>Palo Alto Research Center (PARC), Palo Alto, California 94304</s1><sZ>5 aut.</sZ><sZ>6 aut.</sZ></fA14><fA20><s1>1710-1712</s1></fA20><fA21><s1>2003-09-01</s1></fA21><fA23 i1="01"><s0>ENG</s0></fA23><fA43 i1="01"><s1>INIST</s1><s2>10020</s2></fA43><fA44><s0>8100</s0><s1>© 2003 American Institute of Physics. All rights reserved.</s1></fA44><fA47 i1="01" i2="1"><s0>03-0352830</s0></fA47><fA60><s1>P</s1></fA60><fA61><s0>A</s0></fA61><fA64 i1="01" i2="1"><s0>Applied physics letters</s0></fA64><fA66 i1="01"><s0>USA</s0></fA66><fC01 i1="01" l="ENG"><s0>We report unidirectional emission from lasing in In<sub>0.09</sub>Ga<sub>0.91</sub>N/In<sub>0.01</sub>Ga<sub>0.99</sub>N multiple-quantum-well spiral micropillars. Our imaging technique shows that the maximum emission comes from the notch of the spiral microcavities at an angle about 40° from the normal of the notch. At room temperature, the spiral microcavity lases near 400 nm when optically pumped with 266 or 355 nm light. 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